Strained-layer quantum well materials grown by MOCVD for diode laser application

Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser

Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).

STRAINED-LAYER 1.5pm WAVELENGTH InGaAs/lnP MULTIPLE QUANTUM WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY

A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,+,As/ In,Ga, .,As, -”P, strained-layer multiple quantum well (SLMQW) lasers over lattice-matched MQW lasers. Threshold current density was found to depend sensitively on the InAs content x and thickness d of the In,Ga, -.As quantum wells. Threshold current densities as low as 370A/cm2 and interna...

Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer

This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm Lg Si0.50Ge0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations (SId/I 2 d) in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface ...

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compa...